Zobrazeno 1 - 2
of 2
pro vyhledávání: '"P. Aspell"'
Autor:
M.C. Habrard, A. Alaerts, L. Hermans, Cor Claeys, Francis Anghinolfi, L. Bosisio, Ettore Focardi, J. Vlummens, P. Delpierre, B. Dierickx, Herman Maes, D. Sauvage, Erik H.M. Heijne, P. Aspell, F. Pengg, Pierre Jarron, M. Campbell, I. Debusschere, A. Mekkaoui, Eddy Simoen
Publikováno v:
IEEE Conference on Nuclear Science Symposium and Medical Imaging.
The monolithic integration of electronics and high-resistivity silicon detectors is reported. The approach is based on CMOS circuit integration in the top layer of high-resistivity SOI (silicon-on-insulator) wafers. In a preliminary feasibility study
Autor:
M.C. Habrard, G. Winderickx, Dirk Wouters, S. Kashigin, L. Bosisio, Eddy Simoen, I. Debusschere, Ettore Focardi, Pierre Jarron, Cor Claeys, B. Dierickx, Herman Maes, Francis Anghinolfi, D. Sauvage, Geert Willems, P. Delpierre, P. Aspell, F. Forti, L. Hermans, Erik H.M. Heijne, M. Campbell
Publikováno v:
IEEE Conference on Nuclear Science Symposium and Medical Imaging.
A novel approach to monolithic pixel detectors based on SOI (silicon-on-insulator) wafers with high-resistivity substrates is being pursued by the CERN RD-19 collaboration. The authors report the results of electrical evaluation measurements performe