Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Yanling Shi"'
Publikováno v:
IEEE Access, Vol 7, Pp 5865-5873 (2019)
In this paper, we present an improved high frequency small-signal distributed model for SiGe HBTs under forward-active mode based on the transmission line theory. The distributed nature of the transistor structure is taken into account in the propose
Externí odkaz:
https://doaj.org/article/24fbbc9ec305426aab9b65f2663c0d49
Publikováno v:
IEEE Access, Vol 6, Pp 19752-19761 (2018)
This paper presents an improved radio frequency small-signal equivalent circuit model of deep nanometer fin field-effect transistors (FinFETs) with a 3-D device simulator. A novel parameter extraction method is proposed based on the nonlinear rationa
Externí odkaz:
https://doaj.org/article/a1570208df974f85a0ace5a73c46a00c
Publikováno v:
IEEE Access, Vol 7, Pp 5865-5873 (2019)
In this paper, we present an improved high frequency small-signal distributed model for SiGe HBTs under forward-active mode based on the transmission line theory. The distributed nature of the transistor structure is taken into account in the propose
Publikováno v:
IEEE Access, Vol 6, Pp 19752-19761 (2018)
This paper presents an improved radio frequency small-signal equivalent circuit model of deep nanometer fin field-effect transistors (FinFETs) with a 3-D device simulator. A novel parameter extraction method is proposed based on the nonlinear rationa