Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Sun, Jin"'
Publikováno v:
Electrochemical and Solid-State Letters. 15:B9-B12
Amorphous SiGe:H (a-SiGe:H) single junction solar cells having light absorbing layers with different Ge profiles were fabricated to investigate the effects of the Ge composition profiles on the solar cell performance. The structures of a-SiGe:H layer
Publikováno v:
Electrochemical and Solid-State Letters. 14:B124
Publikováno v:
Electrochemical and Solid-State Letters. 13:G17
The antireflection (AR) properties of Al 2 O 3 and Al x Ti 1―x O y films were investigated for the application of an AR coating of thin-film solar cells. Their optical transmittance was measured to exceed 85% over the entire visible and near-IR spe
Autor:
Yong-Hae Kim, Musarrat Hasan, Jong Hyun Ahn, Sang-Hee Ko Park, Min Seok Jo, Sun Jin Yun, Jae Bon Koo, Houk Jang, Jeehoon Kim, Hyunsang Hwang, Jonghyun Rho, Seung Youl Kang
Publikováno v:
Electrochemical and Solid-State Letters. 13:H80
The electrical characteristics of a transistor on a transferred silicon ribbon are demonstrated. The process temperature is limited to 200°C for potential use on plastic sheets. Additional hydrogen annealing reduces the threshold voltage and improve
Publikováno v:
Electrochemical and Solid-State Letters. 12:H109
p-Type ZnO thin turns were prepared on phosphorus (P)-doped poly-Si by sputter deposition under various ambient ratios of Ar and O 2 and subsequent annealing process at temperatures ranging from 400 to 600°C. The effects of the ambient sputtering ga
Publikováno v:
Electrochemical and Solid-State Letters. 11:D53
W- and Ti-doped thin films were deposited onto sapphire by the sol-gel method. Both films were grown with (020)-preferred direction. Doping of W had a great effect on the transition behaviors. A 1.2 atom % W-doped film showed a largely reduced resist
Publikováno v:
Electrochemical and Solid-State Letters. 11:G55
Publikováno v:
Electrochemical and Solid-State Letters. 11:H173
V 2 O 3 films fabricated on (1010) or (1012) Al 2 O 3 substrates in a sol-gel process and subsequent annealing in a very low pressure exhibited an abrupt and large metal-insulator transition (MIT) near -104°C on heating. In this study, VO 2 films in
Publikováno v:
Electrochemical and Solid-State Letters. 10:H90
The effect of the dielectric constant and surface roughness of gate dielectrics on the electrical performance of pentacene-thin-film transistor (TFT) was investigated using high-K ZrO 2 films deposited by plasma-enhanced atomic layer deposition. The
Publikováno v:
Electrochemical and Solid-State Letters. 10:J136
Pentacene organic thin-film transistors (OTFTs) were fabricated on a polyethersulfone (PES) substrate with an Al 2 O 3 gate dielectric grown at 150°C by plasma enhanced atomic layer deposition. Due to the roughness of the Al 2 O 3 surfaces, the OTFT