Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Long Zhang"'
Publikováno v:
ECS Transactions. 80:287-295
Abstract For advanced node such as 14nm technology and beyond, Patterning is one of the key challenges in the semiconductor industry. Advanced pattern transfer techniques such as negative tone development (NTD) technology are under investigation to e
Publikováno v:
ECS Transactions. 69:313-319
The technology of High-K/metal gate has led to the continuity of device scaling and enabled the extension of Moore’s Law towards 28 nm node and beyond. The gate last approach has been widely adopted since it can better control n/p-MOS transistor th
Publikováno v:
ECS Transactions. 60:145-150
Since CMOS technology moved to sub40nm node and beyond, the limits of both pre-etch and post-etch process have posed the huge challenges to contact etch itself, contact etch is playing a more and more critical role in yield enhancement. In this paper
Publikováno v:
ECS Transactions. 60:343-347
Metal hard-mask based all-in-one etch scheme has been extensively integrated with Cu interconnects for its significant improvement in terms of the line sidewall roughness, the reduction of ultra low-k material damage and the enhancement of lithograph
Autor:
Jun-Qing Zhou, Dong-Jiang Wang, Cheng-Long Zhang, Hai-Yang Zhang, Min-Da Hu, Wang Xinpeng, Kwok-Fung Lee
Publikováno v:
ECS Transactions. 52:325-330
Porous low-k dielectrics have been extensively integrated into back-end-of-line (BEOL) for its significant improvement of chip resistance-capacitance (RC) delay performance. However, Metal hard-mask (MHM) has to be introduced to reduce the low-k dama
Autor:
Shih-Mou Chang, Cheng-Long Zhang, Xinpeng Wang, Kwok-Fung Lee, Xing-Hua Song, Wang Dongjiang, Min-Da Hu, Jun-Qing Zhou, Hai-Yang Zhang
Publikováno v:
ECS Transactions. 44:357-361
In this work, we focused on the via-first approach and studied the impacts of trench etch on the electrical reliability of copper interconnects in terms of electro migration (EM), stress migration (SM), time dependent dielectric breakdown (TDDB) and