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Publikováno v:
Diamond and Related Materials. 89:28-34
Enormous growth in the use of electronic gadgets presents a challenge to develop efficient electromagnetic interference (EMI) shielding materials specifically using composites with properties such as light weight and high shielding due to absorption.
Autor:
Yuji Takakuwa, Rintaro Sugimoto, Hiroyuki Hayashi, Shuichi Ogawa, Susumu Takabayashi, Meng Yang
Publikováno v:
Diamond and Related Materials. 81:16-26
The relationship between the chemical structure and electrical characteristics of diamondlike carbon (DLC) films has been clarified. The DLC films were formed in atmospheres with different ratios of methane to argon under the photoemission-assisted T
Publikováno v:
Diamond and Related Materials. 76:68-73
Diamond films could be used as a dielectric material in the field of microwave technology. However, nitrogen impurities are frequently incorporated in diamond films unintentionally and/or intentionally. In this investigation, dielectric properties of
Publikováno v:
Diamond and Related Materials. 73:114-120
Low dielectric loss, high quality diamond films could be exploited as a promising dielectric material. On the other hand, dielectric properties of diamond films are markedly affected by deposition conditions. In this investigation, dielectric propert
Autor:
Juan Wang, Hu Chao, Fang Lin, Zongchen Liu, Fengnan Li, Jiao Fu, Wei Wang, Kun Fu, Li Shuoye, Hong-Xing Wang
Publikováno v:
Diamond and Related Materials. 69:237-240
A diamond-based field-effect transistor (FET) with SiNx and ZrO2 double dielectric layer has been demonstrated. The SiNx and ZrO2 gate dielectric are deposited by plasma-enhanced chemical vapor deposition (PECVD) and radio frequency (RF) sputter meth
Autor:
Adithya Prakash, Kalpathy B. Sundaram
Publikováno v:
Diamond and Related Materials. 64:80-88
Thin films of boron carbon nitride (BCN) are deposited by co-sputtering of B 4 C (Direct Current—DC) and BN (Radio frequency—RF) targets with varying N 2 /Ar gas flow ratio and DC target power. BCN being a low-k material and a potential inter lay
Publikováno v:
European Conference on Diamond Diamond-like Materials Carbon Nanotubes and Nitrides (DIAMOND 2010)
European Conference on Diamond Diamond-like Materials Carbon Nanotubes and Nitrides (DIAMOND 2010), Sep 2010, Budapest, Hungary
Diamond and Related Materials
Diamond and Related Materials, Elsevier, 2011, 20 (5-6), pp.729-732. ⟨10.1016/j.diamond.2011.03.011⟩
Diamond and Related Materials, 2011, 20 (5-6), pp.729-732. ⟨10.1016/j.diamond.2011.03.011⟩
European Conference on Diamond Diamond-like Materials Carbon Nanotubes and Nitrides (DIAMOND 2010), Sep 2010, Budapest, Hungary
Diamond and Related Materials
Diamond and Related Materials, Elsevier, 2011, 20 (5-6), pp.729-732. ⟨10.1016/j.diamond.2011.03.011⟩
Diamond and Related Materials, 2011, 20 (5-6), pp.729-732. ⟨10.1016/j.diamond.2011.03.011⟩
Papier complet sur http://www.sciencedirect.com/science/article/pii/S0925963511000963; International audience; In this paper, the first step of the design of a junction termination structure usable on diamond Schottky diodes is introduced. Through th
Publikováno v:
Diamond and Related Materials. 13:1032-1036
We investigate the feasibility of electrically structuring flat films by swift heavy ion irradiation to create durable field emitters. Using mass separated ion beam deposition amorphous carbon films, doped with H and F to influence sp3-fraction and d