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Autor:
Radoslaw Zwierz, S. Golka, Zbigniew Galazka, Dietmar Siche, Albert Kwasniewski, Krzysztof Kachel, Roberto Fornari, Martin Albrecht, Daniela Gogova, Martin Schmidbauer, M. Korytov
Publikováno v:
CrystEngComm. 14:8536
Hexagonal GaN (0001) has been grown by a pseudo-HVPE method on β-Ga2O3 (100) using an intermediate low-temperature buffer layer formed by in situ NH3 treatment of β-Ga2O3 substrate. A simple method for self-separation of bulk GaN from the β-Ga2O3