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Intensity and Phase Modulators at 1.55 μm with InAs/InGaAs Quantum Dots Epitaxially Grown on Silicon
Publikováno v:
CLEO Pacific Rim Conference.
InAs quantum dot core electro-optic modulators are fabricated on (100) silicon substrates opening up large-scale III-V photonic integration. Mach-Zehnder modulator with 8 mm long electrode has 2.2V $V \pi$ and less than 3 dB/cm propagation loss.