Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Ji, Feng"'
Publikováno v:
Chinese Physics Letters. 20:127-129
Heterostructures of an n-type ZnO film/p-type diamond film on the { 111} crystalline diamond substrate have been prepared for the first time. The electrodes of the n- and p-type semiconductors are experimentally verified to be ohmic. The diode shows
Autor:
Shen Cai-Xia, Wang Cheng-Xin, Han Yong-Hao, Zhang Tie-Chen, Gao Chun-Xiao, Luo Ji-Feng, Li Xun, Liu Hong-Wu
Publikováno v:
Chinese Physics Letters. 19:1513-1515
A heterojunction diode has been fabricated by boron-doped p-type diamond thin film grown epitaxially on a silicon-doped n-type cubic boron nitride bulk crystal using the conventional hot filament chemical vapour deposition method. The ohmic electrode