Zobrazeno 1 - 10
of 30
pro vyhledávání: '"Lin Gu"'
Autor:
Xi Chen, Zheng Cheng, X. J. Hu, Xinqiang Cai, Lin Gu, Shuai-Hua Ji, Lin Tang, Qinghua Zhang, Wantong Huang, Zhao Dapeng, Fanqi Meng
Publikováno v:
Chinese Physics Letters. 37:087401
Layered material indium selenide (In x Se y ) is a promising candidate for building next-generation electronic and photonic devices. We report a zirconium aided MBE growth of this van der Waals material. When co-depositing zirconium and selenium onto
Autor:
Jingwen Guo, Kejing Zhu, Menghan Liao, Shou-Cheng Zhang, Xucun Ma, Lin Tang, Hong Yao, Xi Chen, Yayu Wang, Wei Li, Wenhui Duan, Xiaozhi Liu, Ke He, Can-Li Song, Ding Zhang, Lin Gu, Qinghua Zhang, Qi-Kun Xue, Jiaheng Li, Pu Yu, Yong Xu, Xiao Feng, Yan Gong, Lili Wang
Publikováno v:
Chinese Physics Letters. 36:089901
Publikováno v:
Chinese Physics Letters. 13:768-771
The dependence of optical interface phonon on structure was demonstrated for thin layer inserted GaAlAs quantum well structures. It was found that the dispersion is sensitive to the Al-content of the inserted layer but almost independent of the posit
Publikováno v:
Chinese Physics Letters. 13:696-699
The 1/2{111}-type ordered structure observed in lanthanum-modified lead zirconate titanate has been proved to be stable in the next-nearest-neighbor approximation by the eight-point cluster variation method. The order parameter as a function of the c
Autor:
Xu He, Yaqing Feng, Lin Gu, Kuijuan Jin, Huibin Lu, Zhenzhong Yang, Chen Ge, Qian Wan, Haizhong Guo, Guozhen Yang, Meng He
Publikováno v:
Chinese Physics Letters. 33:076801
Employing atomic force microscopy, transmission electron microscopy and the second harmonic generation technique, we carefully explore the structural properties of 6-unit-cell-thick La0.8Sr0.2MnO3 films grown on SrTiO3 with atomically fat TiO2-termin
Publikováno v:
Chinese Physics Letters. 11:349-352
The behaviour of optical interface phonon is investigated first for the graded quantum well of Ga1-xAlxAs in the dielectric continuum model. It is found that the behaviour of interface phonon modes is quite different from that in square quantum well
Publikováno v:
Chinese Physics Letters. 10:290-293
The electronic structure of C70 molecule with D5h symmetry has been studied using a simple tight-binding approximation. Comparing the results with those of local-density approximation calculation and experiment, we have determined the hopping matrix
Publikováno v:
Chinese Physics Letters. 32:026102
We study the stability and performance of Li absorption on the composite structure (B80C72) of boron fullerene and graphene by first-principles calculations. Our results show that the Li storage capacity of the composite structure is estimated to be
Publikováno v:
Chinese Physics Letters; Jun2003, Vol. 20 Issue 6, p885-887, 3p
Autor:
Rong, Wang Feng��ZHANG, Zhi-Zhong, Chen, Xiao-Shan, Wu, Shu-Lin, Gu, Bo, Shen, You-Dou, Zheng, Shu-Sheng, Jiang
Publikováno v:
Chinese Physics Letters; Jun2001, Vol. 18 Issue 6, p813-815, 3p