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pro vyhledávání: '"ZHAO LI"'
Publikováno v:
Ceramics International. 48:1956-1962
A series of (In1-xAlx)2O3 (0.1 ≤ x ≤ 0.6) films with tunable bandgap were grown on MgO (100) substrates by MOCVD. The influences of chemical compositions and growth temperatures on the film properties were studied systematically. XRD analyses ind
Publikováno v:
Ceramics International. 43:10263-10269
Rare-earth-doped WO 2.72 microspheres (RE-WO 2.72 MSs) have been successfully synthesized by using a facile solvothermal route with tungsten salt as precursor, RE (RE=Ce, La, and Y) metal salts as dopants, and ethanol as solvent. Results of X-ray dif
Publikováno v:
Ceramics International. 42:551-558
Metalorganic chemical vapor deposition (MOCVD) of γ-Al 2 O 3 films is performed on MgO (110) and (111) substrates by using trimethylaluminum and O 2 as the precursors. The effects of post-deposition annealing on the microstructure and epitaxial rela
Publikováno v:
Ceramics International. 41:2572-2575
Tin-doped gallium oxide (Ga2O3:Sn) films with different Sn contents were deposited on MgAl2O4 (1 0 0) substrates by metal organic chemical vapor deposition (MOCVD) technique. Structural analysis revealed that the films with 1% to 5% Sn were polycryst
Publikováno v:
Ceramics International. 40:4203-4206
Epitaxial indium oxide (In 2 O 3 ) films have been prepared on MgO (110) substrates by metal-organic chemical vapor deposition (MOCVD). The deposition temperature varies from 500 °C to 700 °C. The films deposited at each temperature display a cube-