Zobrazeno 1 - 10
of 415
pro vyhledávání: '"01"'
Autor:
Jun Hee Lim, Tae Ho Lee, Changhwan Shin, Tae Geun Kim, Ju Hyun Park, Young Woo Park, Suk Bum Hong
Publikováno v:
Applied Surface Science. 477:104-110
This study presents the improved memory properties of TiN/Al2O3/Si3N4/SiO2/poly-Si (TANOS) capacitors after rapid thermal annealing (RTA) and high-pressure annealing processes (HPAP) using H2 and D2 molecules. First, it was confirmed that the recryst
Autor:
Seung Kyu Oh, Hyun Jung Park, Kyoung Jin Choi, Gil Jun Lee, Min Joo Park, Tae Kyoung Kim, Joon Seop Kwak, Yu-Jung Cha, In Yeol Hong
Publikováno v:
Applied Surface Science. 477:220-225
Two different SiO2/TiO2 distributed Bragg reflectors (DBR) with ITO ohmic contacts were investigated as p-type reflective electrodes in InGaN/GaN flip-chip light-emitting diodes (FC-LEDs). The DBR structures were designed to have reflectance over 95%
Autor:
Dong Hoe Kim, Sang Myeong Lee, Byeong Jo Kim, Hyun Suk Jung, Mincheol Kim, Mansoo Choi, Sangwook Lee, Dong Geon Lee
Publikováno v:
Applied Surface Science. 477:131-136
Mesoporous TiO2 (mp-TiO2) layers are commonly used as electron transport layers in perovskite solar cells, which help to extract electrons from the perovskite light-absorbing layer and transport them to the electrodes. We investigated the effects of
Publikováno v:
Applied Surface Science. 462:310-315
We investigate the influence of Gallium Nitride (GaN) nanocolumns on the water splitting. The results show that with the GaN nanocolumns diameters decreasing from 250 to 170 nm, the photocurrents for the water splitting increase from 0.12 to 0.29 mA/
Publikováno v:
Applied Surface Science. 461:206-211
We have prepared high temperature stable Schottky MOS diodes on AlGaN/GaN heterostructure with Ir-Al oxide based gate oxide layer and analyzed current transport mechanism in these diodes up to very high temperatures. The thermionic emission analysis
Autor:
Meng Tao
Publikováno v:
Applied Surface Science. 462:8-17
Surface states are a classic obstacle in semiconductor technologies dating back to the John Bardeen era. We propose a generic approach, i.e., valence-mending passivation, to remove surface states. This paper reviews valence-mending passivation of the
Publikováno v:
Applied Surface Science. 462:799-803
In the present study, the threshold voltage turning of AlGaN/GaN heterostructure field-effect transistor (HFETs) by NiO gate electrode was evaluated. Firstly, NiO films were sputtered on sapphire substrates for material characterization. The composit
Autor:
Thanh-Toan Pham, Marina Gutierrez, Daniel Araujo, Jose Carlos Piñero, Fernando Lloret, Julien Pernot, Jesus Canas
Publikováno v:
Applied Surface Science
Applied Surface Science, Elsevier, 2018, 461, pp.93-97. ⟨10.1016/j.apsusc.2018.06.163⟩
Applied Surface Science, Elsevier, 2018, 461, pp.93-97. ⟨10.1016/j.apsusc.2018.06.163⟩
Alumina is a promising candidate for fabricating the gate of diamond metal oxide semiconductor field effect transistor (MOSFET) due to its outstanding nominal properties: A high gap of 8.8 eV and a high static dielectric constant of 9. However, such
Publikováno v:
Applied Surface Science. 461:242-248
In this contribution we have focused on comparison of spectroscopic properties of semi-insulating (SI) GaAs and 4H-SiC detectors of thermal neutrons fabricated at the Institute of Electrical Engineering SAS in Piesťany. 6LiF reactive film has been a
Autor:
Edmund Dobročka, Matej Mičušík, Michal Kučera, Ján Šoltýs, M. Gregor, Róbert Kúdela, Roman Stoklas, M. Blaho, Dagmar Gregušová, F. Gucmann, O. Pohorelec, I. Brytavskyi
Publikováno v:
Applied Surface Science. 461:33-38
This work describes the preparation of a passivation AlOx layer grown in-situ in an MOVPE reactor immediately after the growth of a III-V semiconductor structure. Aluminum layers were deposited on GaAs surface at temperatures of 650, 600, 500, and 45