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pro vyhledávání: '"Na Lin"'
Publikováno v:
Applied Physics Letters. 106:111604
A technique for achieving square-shape quantum wells (QWs) against the intrinsic polar discontinuity and interfacial diffusion through self-compensated pair interlayers is reported. Ultrathin low-and-high % pair interlayers that have diffusion-blocki
Publikováno v:
Applied Physics Letters. 104:012110
We present a scheme for in situ self-release of thick GaN 2-in. wafer from sapphire substrate by engineering the gradient of misfit strains. Release energies of a-, m-, and c-planes of wurtzite GaN are systematically calculated under different biaxia
Publikováno v:
Applied Physics Letters; 3/16/2015, Vol. 106 Issue 11, p1-5, 5p, 1 Diagram, 4 Graphs
In situ self-release of thick GaN wafer from sapphire substrate via graded strain field engineering.
Publikováno v:
Applied Physics Letters; 1/6/2014, Vol. 104 Issue 1, p012110-1-012110-5, 5p, 2 Diagrams, 2 Graphs