Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Jian Gu"'
Publikováno v:
Applied Physics Letters. 83:2268-2270
We report the design, fabrication, and characterization of room-temperature Si single-electron memories using nanoimprint lithography (NIL). The devices consist of a narrow channel metal–oxide–semiconductor field-effect transistor and a sub-10-nm
Publikováno v:
Applied Physics Letters. 81:1104-1106
Single-crystal silicon has been achieved by patterning amorphous silicon film on silicon dioxide substrate into nanoscale lines and nickel-induced lateral crystallization. Line width affects the single-crystal silicon formation significantly. Narrow
Publikováno v:
Applied Physics Letters. 88:133502
All polymer field effect transistors have been fabricated combining nanoimprint lithography and inkjet printing. Trenches with hydrophilic bottoms confined by hydrophobic walls with considerable height are patterned by nanoimprint lithography. Conduc
Publikováno v:
Applied Physics Letters; 9/15/2003, Vol. 83 Issue 11, p2268, 3p, 3 Diagrams, 3 Graphs