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pro vyhledávání: '"C.-Y. Ng"'
Publikováno v:
Applied Physics Letters. 88:063103
The static dielectric constant of isolated silicon nanocrystals (nc-Si) embedded in a SiO2 thin film synthesized by Si+ implantation has been determined from capacitance measurement based on the Maxwell–Garnett effective medium approximation and th
Publikováno v:
Applied Physics Letters. 86:152110
Influence of distribution of silicon nanocrystals (nc-Si) embedded in SiO2 matrix on charge injection and charge decay of the nc-Si has been investigated with electrostatic force microscopy. For nc-Si distributing in the surface region, the size of c