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Publikováno v:
Applied Physics Letters. 118:122106
Integrating III–V gain elements in the silicon photonics platform via selective area heteroepitaxy (SAH) would enable large-scale and low-cost photonic integrated circuits. Here, we demonstrate antiphase boundary (APB)-free gallium arsenide (GaAs)
Publikováno v:
Applied Physics Letters. 118:104103
Using photovoltaic cells as photovoltaic laser power converters (PLPCs) is a potential technology for long-range wireless power transfer. Intrinsic processes that limit the performance of PLPCs have not been fully investigated. Based on a thermodynam
Autor:
Kartik Srinivasan, T. J. Clark, Krishna C. Balram, C. Doolin, John P. Davis, H. Ramp, Bradley Hauer
Publikováno v:
Appl Phys Lett
Ramp, H, Clark, T J, Hauer, B D, Doolin, C, Coimbatore Balram, K & Davis, J P 2020, ' Wavelength transduction from a 3D microwave cavity to telecom using piezoelectric optomechanical crystals ', Applied Physics Letters, vol. 116, 174005 . https://doi.org/10.1063/5.0002160
Ramp, H, Clark, T J, Hauer, B D, Doolin, C, Coimbatore Balram, K & Davis, J P 2020, ' Wavelength transduction from a 3D microwave cavity to telecom using piezoelectric optomechanical crystals ', Applied Physics Letters, vol. 116, 174005 . https://doi.org/10.1063/5.0002160
Microwave to optical transduction has received a great deal of interest from the cavity optomechanics community as a landmark application for electro-optomechanical systems. In this Letter, we demonstrate a novel transducer that combines high-frequen
Publikováno v:
Applied Physics Letters, 104:053116, 1-5. American Institute of Physics
Using a thin capping layer to engineer the structural and optical properties of InAs/GaAs quantum dots (QDs) has become common practice in the last decade. Traditionally, the main parameter considered has been the strain in the QD/capping layer syste
Autor:
Kuanrong Qiu, Chao Zhang, Liao Zhenghai, Wang Zhiping, Huo Rongling, Liangliang Tang, Zhuming Liu
Publikováno v:
Applied Physics Letters. 114:193902
The power output and the efficiency of a thermophotovoltaic (TPV) system are determined by the radiation from a heat source, TPV cells, system parasitic losses, cell cooling subsystems, etc. The cells are core devices of a system, and the performance
Publikováno v:
Applied Physics Letters. 114:191102
We present a so-called “split-well direct-phonon” active region design for terahertz quantum cascade lasers (THz-QCLs). Lasers based on this scheme profit from both elimination of high-lying parasitic bound states and resonant-depopulation of the
Autor:
Hongwei Zhao, Aidan A. Taylor, Bei Shi, Lei Wang, Bowen Song, Jonathan Klamkin, Simone Tommaso Suran Brunelli
Publikováno v:
Applied Physics Letters. 114:172102
We report the development of gallium arsenide (GaAs) films grown on V-groove patterned (001) silicon (Si) by metalorganic chemical vapor deposition. This technique can provide an advanced virtual substrate platform for photonic integrated circuits on
Publikováno v:
Applied Physics Letters. 114:152102
GaAs1−xBix/AlGaAs quantum wells (QWs) with varying As/Ga beam equivalent pressure (BEP) ratios were grown by solid source molecular beam epitaxy at a relatively high temperature of 350–400 °C intended for light emitting applications with wavelen
Autor:
Lijuan Wang, Bing Yan, Li Yue, Xiaolei Zhang, Shumin Wang, Liangqing Zhu, Jun Shao, Xiren Chen, Feng Liu, Wenwu Pan, Li Han
Publikováno v:
Applied Physics Letters. 114:052104
Band-tail states in semiconductors reflect the effects of material growth and/or treatment, affect the performance of optoelectronic applications, and are hence a well-concerned issue. Dilute-Bi GaAs is considered very competitive though the role of
Autor:
X. Collins, Adam P. Craig, M. Jain, Andrew R. J. Marshall, A. Niblett, Laura Meriggi, T. Cann
Publikováno v:
Applied Physics Letters. 114:053501
Extended short-wave infrared (SWIR) avalanche photodiodes based on III–V quaternary alloys were grown on GaSb. An InGaAsSb absorber allowed for cut-off wavelengths of 2.2 μm and 2.75 μm, at 77 K and 300 K, respectively. A multiplication layer of