Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Martin Albrecht"'
Publikováno v:
Applied Physics Letters. 90:111902
The authors report a detailed comparison of low temperature photoluminescence (LTPL) and cathodo luminescence (LTCL) spectra collected in the same stacking faults rich area of a 4H silicon carbide epitaxial layer. In both cases, they find that the ma
Autor:
Axel Hoffmann, M. Dworzak, G. Jaschke, R. Hildebrant, T. Remmele, Lutz Geelhaar, M. Galluppi, Robert Averbeck, Martin Albrecht, Henning Riechert
Publikováno v:
Applied Physics Letters. 88:011903
We compare the luminescence efficiency (i.e., room-temperature photoluminescence intensity), fluctuations in composition and thickness, degree of localization, and luminescence decay times of In0.37Ga0.63As0.983N0.017 quantum wells grown by molecular