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Autor:
Mutsuo Ogura, S. Furue, X. L. Wang, Valia Voliotis, Roger Grousson, A. Enderlin, Marco Ravaro
Publikováno v:
Applied Physics Letters
Applied Physics Letters, American Institute of Physics, 2009, 94 (9), ⟨10.1063/1.3086887⟩
Applied Physics Letters, 2009, 94 (9), ⟨10.1063/1.3086887⟩
Applied Physics Letters, American Institute of Physics, 2009, 94 (9), ⟨10.1063/1.3086887⟩
Applied Physics Letters, 2009, 94 (9), ⟨10.1063/1.3086887⟩
International audience; A spontaneous emission extraction efficiency greater than 50% is observed in a GaAs/AlGaAs quantum well structure grown on the subwavelength-sized ridge top facet of a V-grooved substrate by means of photoluminescence study. T