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Publikováno v:
Applied Physics Letters. 60(11):1371-1374
The atomic structure of the (1̄3̄3̄)CdTe/(2̄1̄1̄)GaAs interface is analyzed by high resolution transmission electron microscopy in order to elucidate the origin of the dual epitaxy in the growth of CdTe on (2̄1̄1̄)GaAs by molecular beam epit