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Autor:
Oracio Barbosa-García, José-Luis Maldonado, Bernhard Ecker, J. C. Nolasco, Gabriel Ramos-Ortiz, E. von Hauff
Publikováno v:
Nolasco, J C, Ramos-Ortiz, G, Maldonado, J L, Barbosa-Garcia, O, Ecker, B & von Hauff, E L 2014, ' Polymer/cathode interface barrier limiting the open circuit voltage in polymer:fullerene organic bulk heterojunction solar cells: A quantitative analysis ', Applied Physics Letters, vol. 104, no. 4, 043308 . https://doi.org/10.1063/1.4863755
Applied Physics Letters, 104(4):043308. American Institute of Physics Publising LLC
Applied Physics Letters, 104(4):043308. American Institute of Physics Publising LLC
By exploring the origin of the saturation current (J0), we show that the polymer/cathode interface determines the open circuit voltage (Voc) in polymer:fullerene bulk heterojunction solar cells. We fabricate and characterize P3HT:PCBM solar cells and
Publikováno v:
Applied Physics Letters. 98(24)
We report a theoretical analysis of the cooling effect due to field emission from n-type PbTe, a typical thermoelectric material. We show that, by calculating the average energies of field and replacement electrons, the energy exchange in field emiss
Publikováno v:
Applied Physics Letters. 60(11):1371-1374
The atomic structure of the (1̄3̄3̄)CdTe/(2̄1̄1̄)GaAs interface is analyzed by high resolution transmission electron microscopy in order to elucidate the origin of the dual epitaxy in the growth of CdTe on (2̄1̄1̄)GaAs by molecular beam epit
Publikováno v:
Applied Physics Letters, 99(10):103302, 103302-1/4. American Institute of Physics
Sharma, A, Matthijssen, S J G, Bobbert, P A & de Leeuw, D M 2011, ' Influence of the semiconductor oxidation potential on the operational stability of organic field-effect transistors ', Applied Physics Letters, vol. 99, no. 10, pp. 103302-103302-3 . https://doi.org/10.1063/1.3634066
Applied Physics Letters, 99(10). American Institute of Physics Publising LLC
Sharma, A, Matthijssen, S J G, Bobbert, P A & de Leeuw, D M 2011, ' Influence of the semiconductor oxidation potential on the operational stability of organic field-effect transistors ', Applied Physics Letters, vol. 99, no. 10, pp. 103302-103302-3 . https://doi.org/10.1063/1.3634066
Applied Physics Letters, 99(10). American Institute of Physics Publising LLC
During prolonged application of a gate bias, organic field-effect transistors show a gradual shift of the threshold voltage towards the applied gate bias voltage. The shift follows a stretched-exponential time dependence governed by a relaxation time
Autor:
H. Kebaili, Olivier Deparis, Sébastien R. Mouchet, Mohamed Nawfal Ghazzal, Jean-Pol Vigneron, Priscilla Simonis, J. De Coninck, Eric M. Gaigneaux
Publikováno v:
Deparis, O, Ghazzal, M N, Simonis, P, Mouchet, S, Kebaili, H, De Coninck, J, Gaigneaux, E M & Vigneron, J P 2014, ' Theoretical condition for transparency in mesoporous layered optical media: Application to switching of hygrochromic coatings ', Applied Physics Letters, vol. 104, no. 2, 023704, pp. 3704 . https://doi.org/10.1063/1.4862658
Mesoporous Bragg stacks are able to change color upon infiltration or displacement of liquid compounds inside their porous structure. Reversible switching from transparency to coloration offers additional functionality. Based on Bruggeman's effective
Publikováno v:
Chung, M, Choi, J-Y, Mayer, A, Miskovsky, N & Cutler, P H 2014, ' Tip-geometry enhanced cooling of field emission from the n-type semiconductor ', Applied Physics Letters, vol. 104, pp. 083502 . https://doi.org/10.1063/1.4866339
The cooling effect of field emission from an n-type semiconductor was theoretically investigated in quest for a solid state cooler. The vacuum potential was exactly expressed in terms of the semiconductor cathode geometry. This leaded to the more acc