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Autor:
B. W. H. van de Loo, Olindo Isabella, Miro Zeman, Andrea Ingenito, Marcel A. Verheijen, Wilhelmus M. M. Kessels
Publikováno v:
Applied Physics Letters, 110(26):263106. American Institute of Physics
Applied Physics Letters, 110(26)
Applied Physics Letters, 110(26)
Black silicon (b-Si) nanotextures can significantly enhance the light absorption of crystalline silicon solar cells. Nevertheless, for a successful application of b-Si textures in industrially relevant solar cell architectures, it is imperative that
Publikováno v:
Applied Physics Letters. 101(13)
We report studies of the carrier extraction mechanism in Si solar cells with Ge quantum dots (QDs), which enable the optical absorption of photons with energies below the band gap of the host. Photocurrent measurements revealed that the photocurrent
Autor:
Daichi Tsukahara, Hiroki Takeuchi, Ryota Takabe, Takashi Suemasu, Weijie Du, Yunpeng Li, Masakazu Baba, Kaoru Toko, Suguru Yachi, Noritaka Usami
Publikováno v:
Applied physics letters. 108(15):152101
p-BaSi2/n-Si heterojunction solar cells consisting of a 20 nm thick B-doped p-BaSi2 epitaxial layer (p = 2.2 × 1018 cm−3) on n-Si(111) (ρ = 1–4 Ω cm) were formed by molecular beam epitaxy. The separation of photogenerated minority carriers is
Publikováno v:
Applied Physics Letters. 83(10):1950-1952
The nanomechanical properties of single-crystalline silicon cantilevers as resonating elements are investigated in ultra-high vacuum. Flash heating the single-crystalline silicon cantilever at 1000 °C in ultra-high vacuum dramatically reduced the me
Publikováno v:
Applied Physics Letters. 80(24):4617-4619
We fabricated Si single-electron transistors (SETs) having double SiO2 barriers and a polycrystalline Si (poly-Si) dot. The fabrication method of this device is completely compatible with the complementary metal–oxide–semiconductor technology, an
Publikováno v:
APPLIED PHYSICS LETTERS. 80(16):2880-2882
Highly stressed and strongly adhered nanocrystalline diamond films are grown on Si substrates by providing controlled and continuous bias current density (BCD) in microwave plasma chemical vapor deposition system. The stress and hence the curvature o
Autor:
Hideki Koyama
Publikováno v:
APPLIED PHYSICS LETTERS. 80(6):965-967
Luminescent porous silicon (PSi) layers have been made on n-type Si wafers by anodization in a HF solution under illumination with linearly polarized light. It is observed that the photoluminescence from samples anodized at a current density of 30 mA
Publikováno v:
Applied Physics Letters. 80(2):222-224
The selective metalorganic vapor-phase epitaxy of wurtzite GaN was performed on a (111) silicon substrate using SiO_2 grid mask pattern. Within window regions of (0.2–0.5) mm*(0.2–0.5) mm, GaN films free from cracks were achieved. The full width
Publikováno v:
Applied Physics Letters. 79(4):494-496
The low-temperature (410 °C) selective deposition of Si on silicon nitride has been achieved by means of the time-modulated flow of disilane while a very small amount of Si is deposited on SiO2. Very narrow (21 nm width and 28 nm thick) Si wires hav
Publikováno v:
APPLIED PHYSICS LETTERS. 77(24):3947-3949
A stress-released GaAs layer was grown on GaAs bonded to Si substrate with the combination of epitaxial lift-off technique and regrowth by metalorganic chemical vapor deposition. The GaAs thin film was bonded to Si substrate using SeS2 and another Ga