Zobrazeno 1 - 10
of 29
pro vyhledávání: ''
Autor:
Masashi Kuwahara, Kanta Asakawa, Hidemi Shigekawa, Yusuke Arashida, Shotaro Yaguchi, Jun Takeda, Ikufumi Katayama, Keisuke Kaneshima, Katsumasa Yoshioka, Shoji Yoshida, Dang-il Kim, Mikito Tsujii
Publikováno v:
Applied Physics Letters. 117
A scanning probe microscope coupled with either femtosecond laser pulses or terahertz pulses holds great promise not only for observing ultrafast phenomena but also for fabricating desirable structures at the nanoscale. In this study, we demonstrate
Publikováno v:
Applied Physics Letters
Applied Physics Letters, 114(2):021104. American Institute of Physics
Applied Physics Letters, 114(2):021104. American Institute of Physics
We performed quantum interference measurements using photon pairs generated via cavity enhanced spontaneous four-wave mixing in an indium phosphide membrane micro-ring resonator which was optically pumped by a continuous-wave laser. The internal gene
Publikováno v:
Applied Physics Letters, 102(4):041110, 041110-1/4. American Institute of Physics
We demonstrated for the first time an azimuthally polarized laser source from an electrically driven metallic cavity nanolaser with a physical cavity volume of 0.146 ¿3 (¿¿=¿1416¿nm). Single TE01 mode lasing at 78¿K was achieved by taking the a
Autor:
S. Kamimura, Rei Furukawa
Publikováno v:
Applied Physics Letters. 111(6):063301
A stress sensor based on a dye-doped polymeric optical fiber is able to detect stress by simple comparison of two luminescence peaks from a pair of energy transfer organic dyes. Coumarin 540A (donor) and Rhodamine 6G (acceptor) were doped in the core
Publikováno v:
Applied Physics Letters. 103(17)
We have investigated the origin of nanostructures formed on metals by low-fluence femtosecond laser pulses. Nanoscale cracks oriented perpendicular to the incident laser polarization are induced on tungsten, molybdenum, and copper targets. The number
Autor:
H. Weidner, S.G. Pavlov, Andrei V. Muravjov, S. H. Withers, Robert E. Peale, V.N. Shastin, R. C. Strijbos
Publikováno v:
Applied Physics Letters, 76(15), 1996-1999. American Institute of Physics
Single axial-mode operation of the pulsed far-infrared p-Ge laser with an intracavity Fabry-Perot type frequency selector has been observed by means of Fourier-transform spectroscopy. A spectral resolution better than 1 GHz has been achieved on an or
Publikováno v:
Applied Physics Letters. 102(17)
Self-organized grating structures formed on Mo and Ti metal surfaces irradiated with femtosecond laser pulses at wavelengths of 800 and 400 nm are investigated by electron microscopy. We observe the formation of the self-organized grating structures
Autor:
Yoshitaka Okada, Ryuji Morita, Hidemi Shigekawa, Masahiro Aoyama, Nobuyuki Sano, Mikio Yamashita, Ryuji Oshima, Haruhiro Oigawa, Osamu Takeuchi
Publikováno v:
Applied physics letters. 85(15):3268-3270
application/pdf
Time-resolved tunneling current measurement in the subpicosecond range was realized by ultrashort-pulse laser combined scanning tunneling microscopy, using the shaken-pulse-pair method. A low-temperature-grown GaNxAs1−x (x=0.36
Time-resolved tunneling current measurement in the subpicosecond range was realized by ultrashort-pulse laser combined scanning tunneling microscopy, using the shaken-pulse-pair method. A low-temperature-grown GaNxAs1−x (x=0.36
Autor:
Hayato Kamioka, Toshio Kamiya, Kazushige Ueda, Hiromichi Ohta, Masahiro Hirano, Hidenori Hiramatsu, Hideo Hosono
Publikováno v:
Applied Physics Letters. 84(6):879-881
We have studied the third-order optical nonlinearity (χ(3)) of epitaxial thin films of layered compounds LaCuOS and LaCuOSe at room temperature by a spectrally resolved degenerative four-wave mixing technique with femtosecond time resolution. The χ
Autor:
J. J. Jung, Takashi Hanada, Takafumi Yao, Jiho Chang, Y. Segawa, D. C. Oh, I. S. Cho, Hisao Makino, H. W. Kim, B. P. Zhang, Meoungwhan Cho, H. S. Song, J. S. Song
Publikováno v:
Applied Physics Letters. 82(23):4095-4097
A laser diode which includes II–VI device structure directly grown on III–V device structure is proposed. This idea makes possible one-chip-multiple-wavelength operation in the visible wavelength region by the vertical integration of individual l