Zobrazeno 1 - 10
of 47
pro vyhledávání: ''
Publikováno v:
Applied Physics Letters, 104:053116, 1-5. American Institute of Physics
Using a thin capping layer to engineer the structural and optical properties of InAs/GaAs quantum dots (QDs) has become common practice in the last decade. Traditionally, the main parameter considered has been the strain in the QD/capping layer syste
Publikováno v:
Applied Physics Letters; 1984, Vol. 45 Issue 6, p600-602, 3p
Publikováno v:
Applied Physics Letters; 1984, Vol. 45 Issue 6, p606-608, 3p
Publikováno v:
Applied Physics Letters; 1984, Vol. 45 Issue 6, p620-622, 3p
Spatially resolved electrical and spectroscopic studies around dislocations in GaAs single crystals.
Publikováno v:
Applied Physics Letters; 1984, Vol. 45 Issue 6, p643-645, 3p
Publikováno v:
Applied Physics Letters; 1984, Vol. 45 Issue 6, p639-641, 3p
Publikováno v:
Applied Physics Letters; 1984, Vol. 45 Issue 6, p680-682, 3p
Publikováno v:
Applied Physics Letters; 1984, Vol. 45 Issue 6, p686-688, 3p
Publikováno v:
Applied Physics Letters; 1984, Vol. 45 Issue 6, p695-697, 3p
Autor:
Shen, H., Pollak, Fred H.
Publikováno v:
Applied Physics Letters; 1984, Vol. 45 Issue 6, p692-694, 3p