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Autor:
Masaki Mizuguchi, K. Nakamura, Takaaki Mano, Koji Horiba, Jun Okabayashi, Masaharu Oshima, A. Fujimori, Kanta Ono
Publikováno v:
Applied Physics Letters. 80(10):1764-1766
In order to investigate the valence-band discontinuity of the GaAs/AlAs interface, the thickness dependence of the photoemission spectra of a GaAs layer in situ deposited on AlAs by molecular-beam epitaxy has been studied. Although the interface is a
Autor:
Takashi Fukui, Katsuhiro Tomioka
Publikováno v:
Applied Physics Letters. 104(7):073507
We report on a fabrication of tunnel field-effect transistors using InGaAs nanowire/Si heterojunctions and the characterization of scaling of channel lengths. The devices consisted of single InGaAs nanowires with a diameter of 30 nm grown on p-type S
Autor:
Eiichi Sano, Yahya Moubarak Meziani, Taiichi Otsuji, Tomohiro Uno, Takuma Ishibashi, Mitsuhiro Hanabe
Publikováno v:
Applied Physics Letters. 89(26):263502
A grating-bicoupled plasmon-resonant terahertz emitter was fabricated using InGaP/InGaAs/GaAs heterostructure material systems. The device structure is based on a high-electron mobility transistor and incorporates doubly interdigitated grating gates