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Autor:
Susumu Okada, Nguyen Thanh Cuong
Publikováno v:
Applied physics letters. 110(13):131601
Theoretical calculations are performed to explore the electronic structures and electron conducting properties of copper (Cu) thin films coated with graphene or h-boron-nitride (h-BN) layers. The Shockley surface states of Cu surfaces are preserved b
Autor:
Akihisa Inoue, Wei Zhang
Publikováno v:
Applied Physics Letters. 83(12):2351-2353
The replacement of Cu by 5%Ag for Cu50Hf45Al5 glassy alloy was found to increase significantly the stability of supercooled liquid against crystallization. The supercooled liquid region reached as large as 110 K for Cu45Hf45Al5Ag5. The extension of t
Publikováno v:
Applied Physics Letters. 82(6):979-981
We have observed the formation process of nanocatalysts that act for the growth of Si nanowires by means of UHV scanning tunneling microscopy. Gold–silicon nanocatalysts that we have examined were thought to form on a hydrogen (H)-terminated [111]
Autor:
T. Fujioka, C. Gupta, Yume Suzuki, Masakazu Kobayashi, Akihisa Takeuchi, Kentaro Uesugi, Hiroyuki Toda
Publikováno v:
Applied Physics Letters. 103:171902
The paper provides an insight into the development of the micropore damage phenomena during the hydrogen ingress and egress process in a high strength aluminum alloy. For this purpose high resolution micro tomography scans on samples subjected to com
Publikováno v:
Applied physics letters. 102(4):043111
From the analysis of the ratio of D peak intensity to G peak intensity in Raman spectroscopy, electron beam irradiation with energies of 100 eV was found to induce damage in single-layer graphene. The damage becomes larger with decreasing electron be
Autor:
Kuniyuki Kakushima, Keisaku Yamada, Kenji Ohmori, Wei Li, Soshi Sato, Hiroshi Iwai, Kenji Natori
Publikováno v:
Applied physics letters. 98(23):233506
Interfacial states of silicon nanowire field-effect transistors with rectangular-like cross-sections (wire height of 10 nm and widths of 9 and 18 nm) have been evaluated from the transfer characteristics in the subthreshold region measured at cryogen
Autor:
Eisuke Tokumitsu, Hiroyuki Kameda, Tadaoki Mitani, Jinwang Li, Tatsuya Shimoda, Takaaki Miyasako, Phan Trong Tue, Bui Nguyen Quoc Trinh
Publikováno v:
Applied Physics Letters. 97(10):102905-102905-3
We show a path for low-temperature crystallization of device-quality solution-processed lead zirconate titanate films. The essential aspect of the path is to circumvent pyrochlore formation at around 300 ℃ during temperature increase up to 400 ℃.
Publikováno v:
Applied Physics Letters, 47(7), 700-702. American Institute of Physics
A novel method has been developed for producing platinum silicide gate electrodes with submicron width. A lateral chemical reaction of platinum with polycrystalline silicon at a step edge was used. The width of the wire is determined by the thickness