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Publikováno v:
Applied Physics Letters, 108(20):203502. American Institute of Physics
By employing a micrometer precision mechanical transfer technique, we embed individual InSb nanowires into a superconducting coplanar waveguide resonator. We investigate the characteristics of a double quantum dot formed in an InSb nanowire interacti
Autor:
M. Lermer, F. W. M. van Otten, Francesco Pagliano, T. Xia, Edmund H. Linfield, Sven Höfling, Thang B. Hoang, Andrea Fiore, Lianhe Li, Leonardo Midolo
Publikováno v:
Applied Physics Letters
Applied Physics Letters, 101(9):091106, 091106-1/4. American Institute of Physics
Applied Physics Letters, 101(9):091106, 091106-1/4. American Institute of Physics
We demonstrate the control of the spontaneous emission rate of single InAs quantum dots embedded in a double-membrane photonic crystal cavity by the electromechanical tuning of the cavity resonance. Controlling the separation between the two membrane
Autor:
Klaus H. Ploog, Haijun Zhu, Wenquan Ma, R Richard Nötzel, Hans-Peter Schönherr, Achim Trampert, Manfred Ramsteiner
Publikováno v:
Applied Physics Letters, 78(9), 1297-1/3. American Institute of Physics
Long and fairly uniform quantum wire arrays have been fabricated by the growth of (In,Ga)As/GaAs multilayer structures. The structural properties of the quantum wires are characterized by atomic force microscopy, x-ray diffractometry, and transmissio
Autor:
G. Servanton, MK Meint Smit, TJ Tom Eijkemans, S Sanguan Anantathanasarn, E.J. Geluk, F. W. M. van Otten, Erwin Bente, T. de Vries, Yohan Barbarin, E. Smalbrugge, P.J. van Veldhoven, Ys Oei, JH Joachim Wolter, R Richard Nötzel
Publikováno v:
Applied Physics Letters, 89(7):073115, 073115-1/3. American Institute of Physics
The authors report lasing of InAs/InGaAsP/InP (100) quantum dots (QDs) wavelength tuned into the 1.55 µm telecom region. Wavelength control of the InAs QDs in an InGaAsP/InP waveguide is based on the suppression of As/P exchange through ultrathin Ga
Publikováno v:
Applied Physics Letters. 101(13)
We report studies of the carrier extraction mechanism in Si solar cells with Ge quantum dots (QDs), which enable the optical absorption of photons with energies below the band gap of the host. Photocurrent measurements revealed that the photocurrent
Publikováno v:
Applied Physics Letters. 80(24):4617-4619
We fabricated Si single-electron transistors (SETs) having double SiO2 barriers and a polycrystalline Si (poly-Si) dot. The fabrication method of this device is completely compatible with the complementary metal–oxide–semiconductor technology, an
Publikováno v:
Applied Physics Letters. 80(24):4591-4593
We propose and demonstrate a spin-filter diode based on semimagnetic semiconductor ZnSe/Zn1−xMnxSe/Zn1−yMnySe/ZnSe heterostructures. It is found that the degree of spin polarization greatly depends on the electric field direction and its magnitud
Autor:
Shinzo Suzuki, Kenji Ishii, Akihiko Fujiwara, Yutaka Maniwa, Ryosuke Iijima, Hiromichi Kataura, Hiroyoshi Suematsu, Yohji Achiba
Publikováno v:
Applied Physics Letters. 80(11):1993-1995
We have measured the local current density on individual single-wall carbon nanotubes (SWNTs) with the conducting tip of an atomic force microscope; the SWNTs make up a nanometer-scale electronic circuit on an insulating substrate. Scanning tunneling
Publikováno v:
Applied Physics Letters. 97(6)
We demonstrated photoluminescence (PL) enhancement in single carbon nanotubes using localized surface plasmons. Single nanotube spectroscopy revealed triple the PL intensity enhancement for carbon nanotubes on rough Au surfaces as on fused silica sur
Publikováno v:
APPLIED PHYSICS LETTERS. 95(21)
We study the optical polarization properties of confined structures in InGaN/GaN single quantum well devices. Using a near-field optical setup we investigated the photoluminescence maps with a polarization-modulation method. If the optical emissions