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Publikováno v:
Applied Physics Letters. 83(4):689-691
Artificial two-dimensional semiconductor Kagome lattice structures formed by quantum wires can show ferromagnetism when the flatband is half filled, even though it does not have any magnetic elements. Experimental realization of such a Kagome lattice
Publikováno v:
APPLIED PHYSICS LETTERS. 82(26):4702-4704
A series of InGaN/GaN multiple quantum wells (MQWs) was grown by metalorganic chemical vapor deposition with different well thickness. High-resolution x-ray diffraction studies revealed that the In composition is increasing along the growth direction
Publikováno v:
Applied Physics Letters. 83(3):422-424
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Tatsunosuke Matsui, Masanori Ozaki, and Katsumi Yoshino, Appl. Phys. Lett. 83, 422 (2003) and may
Autor:
J. J. Jung, Takashi Hanada, Takafumi Yao, Jiho Chang, Y. Segawa, D. C. Oh, I. S. Cho, Hisao Makino, H. W. Kim, B. P. Zhang, Meoungwhan Cho, H. S. Song, J. S. Song
Publikováno v:
Applied Physics Letters. 82(23):4095-4097
A laser diode which includes II–VI device structure directly grown on III–V device structure is proposed. This idea makes possible one-chip-multiple-wavelength operation in the visible wavelength region by the vertical integration of individual l
Publikováno v:
Applied Physics Letters. 82(21):3593-3595
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Ryotaro Ozaki, Tatsunosuke Matsui, Masanori Ozaki, and Katsumi Yoshino, Appl. Phys. Lett. 82, 359
Publikováno v:
APPLIED PHYSICS LETTERS. 82(15):2443-2445
We report on the electrical properties of thermally oxidized p-GaN metal–oxide–semiconductor (MOS) diodes with n+ source regions fabricated on sapphire substrates. The n+ regions were selectively produced in Mg-doped GaN by Si+N coimplantation an
Publikováno v:
APPLIED PHYSICS LETTERS. 82(13):2082-2084
P-type regions were produced in undoped GaN films by Be+ and Be++O+ implantation and subsequent annealing at temperatures between 1000 and 1050 °C. From thermal admittance spectroscopic measurements, the activation energy of the Be acceptor level wa
Autor:
Toshiharu Sugiura, Yuji Suzuki, Tomoya Hirosumi, Masahiro Sakai, Makoto Yoshida, Hiroshi Takahashi, Shingo Ono, Nobuhiko Sarukura
Publikováno v:
APPLIED PHYSICS LETTERS. 82(13):2005-2007
We investigated the magnetic-field dependence of terahertz (THz) radiation power from InSb. Significant enhancement of THz-radiation power is observed by using a compact fiber laser that delivered 100 fs optical pulses at a center wavelength of 1560
Publikováno v:
Applied Physics Letters. 82(10):1598-1600
We present a fabrication technique of a probe tip for scattering-type near-field microscopes. In the technique, capillary force is used to attach a metal particle at the apex of micropipettes. We can attach various kinds of particles, such as fluores
Autor:
K. Sreenivas, Parmanand Sharma
Publikováno v:
Applied Physics Letters. 83(17):3617-3619
Fabrication of a highly-sensitive UV detector based on the surface-acoustic-wave (SAW) principle is reported. The output voltage of the SAW oscillator constructed with a ZnO/LiNbO3 hybrid SAW filter was found to decrease linearly with increasing UV l