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Autor:
Martin W. Allen, H-S Kim, Christof P. Dietrich, Stefan Müller, Marius Grundmann, H. von Wenckstern, Florian Schmidt, R. Heinhold
Publikováno v:
Applied Physics Letters, 103(6):062102, 1-5. American Institute of Physics
Electrical properties of a ZnO microwire grown by carbo-thermal evaporation, a ZnO thin film grown by pulsed-laser deposition and a hydrothermally grown ZnO bulk crystal are compared. Deep defects were investigated by means of deep-level transient sp
Autor:
Sergey Sadofev, Reinhard Uecker, YongJin Cho, Roberto Fornari, Zbigniew Galazka, Maxym Korytov, Martin Albrecht, Henning Riechert, Oliver Brandt, Steven C. Erwin, Manfred Ramsteiner, Raffaella Calarco
Publikováno v:
Applied Physics Letters, 101(17):172102, 172102-1/4. American Institute of Physics
A single phase InN epitaxial film is grown on a bulk In2O3(111) wafer by plasma-assisted molecular beam epitaxy. The InN/In2O3 orientation relationship is found to be (0001) ‖ (111) and [11¯00] ‖ [112¯]. High quality of the layer is confirmed b
Autor:
Nobutomo Nakamura, Masahiko Hirao, Masashi Yoshimura, Akira Nagakubo, Kanta Adachi, M. Imade, Y. Mori, Hirotsugu Ogi
Publikováno v:
Applied Physics Letters. 109(18):182108-182108-4
Adachi K., Ogi H., Nagakubo A., et al. Piezoelectric coefficients of GaN determined by hopping conduction of carriers. Applied Physics Letters, 109(18), 182108 (2016) https://doi.org/10.1063/1.4966995.
Using resonant ultrasound spectroscopy, we
Using resonant ultrasound spectroscopy, we
Autor:
Yoshitaka Okada, Ryuji Morita, Hidemi Shigekawa, Masahiro Aoyama, Nobuyuki Sano, Mikio Yamashita, Ryuji Oshima, Haruhiro Oigawa, Osamu Takeuchi
Publikováno v:
Applied physics letters. 85(15):3268-3270
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Time-resolved tunneling current measurement in the subpicosecond range was realized by ultrashort-pulse laser combined scanning tunneling microscopy, using the shaken-pulse-pair method. A low-temperature-grown GaNxAs1−x (x=0.36
Time-resolved tunneling current measurement in the subpicosecond range was realized by ultrashort-pulse laser combined scanning tunneling microscopy, using the shaken-pulse-pair method. A low-temperature-grown GaNxAs1−x (x=0.36
Publikováno v:
Applied Physics Letters. 85(10):1716-1718
N-type epitaxial 4H-SiC layers grown by hot-wall chemical vapor deposition were investigated with regard to deep centers by capacitance-voltage measurements and deep level transient spectroscopy (DLTS). The DLTS spectra revealed that the concentratio
Publikováno v:
Applied Physics Letters. 84(24):4884-4886
Based on detailed temperature-dependent current–voltage (I–V–T) measurements the mechanism of leakage currents through GaN and AlGaN Schottky interfaces is discussed. The experiments were compared to calculations based on thin surface barrier m
Publikováno v:
Applied physics letters. 108(2):021904
Carrier lifetime in nearly threading-dislocation-free ZnO homoepitaxial films was controlled by doping 3d transition-metals (TMs), Ni and Mn. The photoluminescence lifetime of the near-band-edge emission (τPL) was decreased linearly by increasing TM
Publikováno v:
APPLIED PHYSICS LETTERS. 82(26):4702-4704
A series of InGaN/GaN multiple quantum wells (MQWs) was grown by metalorganic chemical vapor deposition with different well thickness. High-resolution x-ray diffraction studies revealed that the In composition is increasing along the growth direction
Publikováno v:
APPLIED PHYSICS LETTERS. 82(13):2082-2084
P-type regions were produced in undoped GaN films by Be+ and Be++O+ implantation and subsequent annealing at temperatures between 1000 and 1050 °C. From thermal admittance spectroscopic measurements, the activation energy of the Be acceptor level wa
Autor:
Hiroki Sugimoto, Richard Haight, D. Aaron R. Barkhouse, Noriyuki Sakai, Homare Hiroi, David B. Mitzi
Publikováno v:
Applied Physics Letters. 100
The heterojunctions formed between Cu2ZnSn(SxSe1−x)4 (CZTSSe) and three Cd-free n-type buffers, ZnS, ZnO, and In2S3, were studied using femtosecond ultraviolet photoemission and photovoltage spectroscopy. The electronic properties including the Fer