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Autor:
Rhj René Vervuurt, Nick F. W. Thissen, Jjl Hans Mulders, JW Jan-Willem Weber, Ageeth A. Bol, Wmm Erwin Kessels
Publikováno v:
Applied Physics Letters, 107:2131101. American Institute of Physics
The patterning of graphene by a 30 kV Ga+ focused ion beam (FIB) is studied by in-situ and ex-situ Raman spectroscopy. It is found that the graphene surrounding the patterned target area can be damaged at remarkably large distances of more than 10 μ
Autor:
Sergey Sadofev, Reinhard Uecker, YongJin Cho, Roberto Fornari, Zbigniew Galazka, Maxym Korytov, Martin Albrecht, Henning Riechert, Oliver Brandt, Steven C. Erwin, Manfred Ramsteiner, Raffaella Calarco
Publikováno v:
Applied Physics Letters, 101(17):172102, 172102-1/4. American Institute of Physics
A single phase InN epitaxial film is grown on a bulk In2O3(111) wafer by plasma-assisted molecular beam epitaxy. The InN/In2O3 orientation relationship is found to be (0001) ‖ (111) and [11¯00] ‖ [112¯]. High quality of the layer is confirmed b
Publikováno v:
Applied Physics Letters. 101(13)
We report studies of the carrier extraction mechanism in Si solar cells with Ge quantum dots (QDs), which enable the optical absorption of photons with energies below the band gap of the host. Photocurrent measurements revealed that the photocurrent
Publikováno v:
APPLIED PHYSICS LETTERS. 83(7):1340-1342
We present a method based on a combination of temporal and spatial Fourier image analysis, involving the incorporation of a time-reversed acoustic propagation component, that can be used to obtain the angular dispersion or general dispersion relation
Autor:
Hiroki Sugimoto, Richard Haight, D. Aaron R. Barkhouse, Noriyuki Sakai, Homare Hiroi, David B. Mitzi
Publikováno v:
Applied Physics Letters. 100
The heterojunctions formed between Cu2ZnSn(SxSe1−x)4 (CZTSSe) and three Cd-free n-type buffers, ZnS, ZnO, and In2S3, were studied using femtosecond ultraviolet photoemission and photovoltage spectroscopy. The electronic properties including the Fer
Autor:
Takashi Jimbo, Yoshitaka Nakano
Publikováno v:
APPLIED PHYSICS LETTERS. 80(25):4756-4758
Electrical characterization of SiO2/n-GaN metal–insulator–semiconductor structures fabricated on sapphire substrates was performed by using high-frequency pulsed capacitance–voltage and capacitance-transient techniques. Fast and slow capacitanc
Publikováno v:
Applied Physics Letters. 75(20):3189-3191
We report an increase in optical absorption peak energy from 3.9 to 5.3 eV, and a lowering of dielectric constant maximum temperature from 320 to 180 °C for SrBi2Ta2O9 mesocrystals.
Autor:
Yoshinori Wada, Yasushige Mori, Kaoru Nakajima, Wataru Maekita, Takao Fukuoka, Motofumi Suzuki, Kenji Kimura
Publikováno v:
Applied Physics Letters. 88(20)
We have demonstrated surface-enhanced Raman spectroscopy on arrays of Ag nanorods aligned in line by a dynamic oblique deposition technique. For the light polarized along the major axis of the nanorods, the plasma resonance of the Ag nanorods has bee
Publikováno v:
Applied Physics Letters. 64(17):2217-2219
An experiment on an acoustic resonance spectrometer for evaluating attenuation characteristics and grain size of polycrystalline metals is described. A noncontacting electromagnetic acoustic transducer is excited to establish a shear‐wave ringing i
Publikováno v:
Applied physics letters. 59(2):237-239
金沢大学設計製造技術研究所 / 金沢大学理工研究域電子情報学系 / 金沢大学工学部
Bismuth‐substituted yttrium iron garnet (Bi:YIG) films were deposited on gadolinium gallium garnet substrate by laser ablation usin
Bismuth‐substituted yttrium iron garnet (Bi:YIG) films were deposited on gadolinium gallium garnet substrate by laser ablation usin