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Autor:
Manish Pandey, Shuichi Nagamatsu, Shifumi Sadakata, Wataru Takashima, Atul S.M. Tripathi, Shuzi Hayase, Shyam S. Pandey
Publikováno v:
Applied Physics Letters. 112(12):123301-123301-5
Fabrication of large area and uniform thin films with preferred edge-on orientation is highly demanded for flexible organic electronic devices. In this work, utilization of a newly designed slider in the floating film transfer method to assist unidir
Autor:
Eugenio Cantatore, Tct Thomas Geuns, JC Johan Bijleveld, Wsc Christian Roelofs, Martijn Kemerink, Raj René Janssen, Sgj Simon Mathijssen, Dago M. de Leeuw, Daniele Raiteri
Publikováno v:
Applied Physics Letters, 98(20):203301
Applied Physics Letters, 98(20):203301, 203301-1/3. American Institute of Physics
Applied Physics Letters, 98(20):203301, 203301-1/3. American Institute of Physics
Ambipolar integrated circuits were prepared with poly (diketopyrrolopyrrole-terthiophene) as the semiconductor. The field-effect mobility of around 0.02 cm(2)/V s for both electrons and holes allowed for fabrication of functional integrated complemen
Autor:
Yuji Yoshida, Shuichi Nagamatsu, Wataru Takashima, Keiichi Kaneto, Nobutaka Tanigaki, Kiyoshi Yase
Publikováno v:
Applied Physics Letters. 84(23):4608-4610
We demonstrated the polymer field-effect transistors (FETs) utilizing regioregular poly(3-alkylthiophene)s (P3AT) films prepared by a drawing method. The P3AT film exhibited large optical dichroic ratio, which originated in the polymer backbones alig
Publikováno v:
Applied Physics Letters. 83(6):1243-1245
Organic field-effect transistors (OFETs) were prepared from an epitaxially grown film fabricated by a wet-transferring process. 2,3,7,8,12,13,17,18-octaethyl-21H,23H-porphyrin platinum(II) was grown by thermal evaporation on the (001) surface of pota
Autor:
Takashi Fukui, Katsuhiro Tomioka
Publikováno v:
Applied Physics Letters. 104(7):073507
We report on a fabrication of tunnel field-effect transistors using InGaAs nanowire/Si heterojunctions and the characterization of scaling of channel lengths. The devices consisted of single InGaAs nanowires with a diameter of 30 nm grown on p-type S
Autor:
Shyam S. Pandey, Shuichi Nagamatsu, Wataru Takashima, Keiichi Kaneto, Shougo Miyajima, Shuzi Hayase
Publikováno v:
Applied Physics Letters. 101(19):193305-193305-4
An electrostatic film fabrication method utilizing the dielectric layer, entitled dielectric barrier electrophoretic deposition (DBEPD) has been proposed. We demonstrated the fabrication of uniform organic semiconductor thin film onto any kind of sub
Publikováno v:
Applied Physics Letters. 101(4):043501-043501-4
AlN/AlGaN/GaN metal-insulator-semiconductor (MIS) structure is analyzed by using capacitance-frequency-temperature (C-f-T) mapping. Applying sputtering-deposited AlN, we attained AlN/AlGaN/GaN MIS heterostructure field-effect transistors with much su
Autor:
Kuniyuki Kakushima, Keisaku Yamada, Kenji Ohmori, Wei Li, Soshi Sato, Hiroshi Iwai, Kenji Natori
Publikováno v:
Applied physics letters. 98(23):233506
Interfacial states of silicon nanowire field-effect transistors with rectangular-like cross-sections (wire height of 10 nm and widths of 9 and 18 nm) have been evaluated from the transfer characteristics in the subthreshold region measured at cryogen
Publikováno v:
Applied physics letters. 99(22):223518
This letter reports the electrical characteristics of nonuniform silicon nanowire nFETs with asymmetric source and drain widths. For electrostatic properties, reduced drain-induced barrier lowering (DIBL) is achieved in a device in which the source i
Publikováno v:
Applied Physics Letters. 97(26):262101-262101-3
We describe single-electron transfer between two donors in thin silicon-on-insulator field-effect transistors with phosphorus-doped channel. At low temperatures, single-electron tunneling through one donor can be identified in source-drain current/ga