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Autor:
Masashi Kuwahara, Kanta Asakawa, Hidemi Shigekawa, Yusuke Arashida, Shotaro Yaguchi, Jun Takeda, Ikufumi Katayama, Keisuke Kaneshima, Katsumasa Yoshioka, Shoji Yoshida, Dang-il Kim, Mikito Tsujii
Publikováno v:
Applied Physics Letters. 117
A scanning probe microscope coupled with either femtosecond laser pulses or terahertz pulses holds great promise not only for observing ultrafast phenomena but also for fabricating desirable structures at the nanoscale. In this study, we demonstrate
Publikováno v:
Applied Physics Letters. 115(26)
We present an efficient fabrication technique for a glass microdome structure (GMDS) based on the microthermal expansion principle, by inflating the microcavities confined between two thin glass slides. This technique allows controlling the height, d
Autor:
Yuqing Jiao, René van Veldhoven, Francesco Pagliano, Tianran Liu, Vadim Pogoretskiy, Andrea Fiore
Publikováno v:
Applied Physics Letters, 115(25):251104. American Institute of Physics
In this paper, an optical switch based on a microelectromechanical phase modulator is presented. Phase tuning is achieved by tuning the vertical gap between two vertically coupled waveguides through the application of a reverse bias on a p-i-n juncti
Autor:
Simone Assali, Leo Miglio, Luca Gagliano, Sebastian Kölling, Roberto Bergamaschini, M Albani, Marcel A. Verheijen, Erik P. A. M. Bakkers, Ang Li
Publikováno v:
Applied Physics Letters, 115(11):113102. American Institute of Physics
Strain engineering in Sn-rich group IV semiconductors is a key enabling factor to exploit the direct bandgap at mid-infrared wavelengths. Here, we investigate the effect of strain on the growth of GeSn alloys in a Ge/GeSn core/shell nanowire geometry
Publikováno v:
Applied Physics Letters
Applied Physics Letters, 114(2):021104. American Institute of Physics
Applied Physics Letters, 114(2):021104. American Institute of Physics
We performed quantum interference measurements using photon pairs generated via cavity enhanced spontaneous four-wave mixing in an indium phosphide membrane micro-ring resonator which was optically pumped by a continuous-wave laser. The internal gene
Publikováno v:
Applied Physics Letters
Applied Physics Letters, American Institute of Physics, 2018, 113 (19), pp.193102. ⟨10.1063/1.5047492⟩
Applied Physics Letters, American Institute of Physics, 2018, 113 (19), pp.193102. ⟨10.1063/1.5047492⟩
We report soliton rains in a tunable Tm-doped fiber laser mode locked by carbon nanotubes. We also detect their second- and third-harmonics. We achieve a tunability of over 56 nm, from 1877 to 1933 nm, by introducing a polarization-maintaining isolat
Autor:
Shuhuai Xiang, Shaobo Han, Jianli Zou, Weihuang Luo, Jiaye Zhang, Kelvin H. L. Zhang, Meng Gu, Freddy E. Oropeza
Publikováno v:
Applied Physics Letters, 112(17):171605. American Institute of Physics
Transparent oxide semiconductors hold great promise for many optoelectronic devices such as transparent electronics, UV-emitting devices, and photodetectors. A p-n heterojunction is the most ubiquitous building block to realize these devices. In this
Autor:
B. W. H. van de Loo, Olindo Isabella, Miro Zeman, Andrea Ingenito, Marcel A. Verheijen, Wilhelmus M. M. Kessels
Publikováno v:
Applied Physics Letters, 110(26):263106. American Institute of Physics
Applied Physics Letters, 110(26)
Applied Physics Letters, 110(26)
Black silicon (b-Si) nanotextures can significantly enhance the light absorption of crystalline silicon solar cells. Nevertheless, for a successful application of b-Si textures in industrially relevant solar cell architectures, it is imperative that
Publikováno v:
Applied Physics Letters. 114(14):142103
Research to synthesize a high-quality GaAs film on an inexpensive substrate has been continuing for decades in the quest to develop a solar cell that achieves both high efficiency and low-cost. Here, we applied a large-grained Ge layer on glass, form
Autor:
L.W. Veldhuizen, Ruud E. I. Schropp
Publikováno v:
Applied Physics Letters, 109(9):093902. American Institute of Physics
We present a silicon-based triple junction solar cell that requires a deposition time of less than 15 min for all photoactive layers. As a low-bandgap material, we used thin layers of hydrogenated amorphous silicon germanium with lower band gap than