Zobrazeno 1 - 10
of 50
pro vyhledávání: '"Solin, A."'
Autor:
Johan Rajander, T. Stewart, J. Theroux, Morgan Dehnel, C. Hollinger, Olof Solin, T. Christensen, M. G. Marsland, S. Johansson
Publikováno v:
AIP Conference Proceedings.
D-Pace has developed a compact cost-effective gamma detector system based on technology licensed from TRIUMF [1]. These photodiode detectors are convenient for detecting the presence of positron emitting radioisotopes, particularly for the case of tr
Publikováno v:
AIP Conference Proceedings.
The extraordinary magnetoresistance (EMR) in metal-semiconductor hybrid structures depends on the orbital motion of carriers in an external magnetic field, and the remarkably high magnetoresistance response observed suggests that the geometry of the
Publikováno v:
AIP Conference Proceedings.
We report the room temperature operation of a quasi-ballistic InSb quantum well Hall sensor that exhibits a high frequency sensitivity of 560nT/√Hz at 20uA bias current. The device utilizes a partitioned buffer layer design that suppresses leakage
Publikováno v:
AIP Conference Proceedings.
We expand upon our previous work and characterize the photo-dependence of the effective Schottky barrier in EOC and I-EOC heterostructures by measuring the open circuit voltage and the change in the reverse bias resistance. Under full illumination by
Autor:
A. M. Gilbertson, M. Fearn, A. Kormányos, D. E. Read, C. J. Lambert, L. Buckle, T. Ashley, S. A. Solin, L. F. Cohen, Jisoon Ihm, Hyeonsik Cheong
Publikováno v:
AIP Conference Proceedings.
We report the low temperature magnetoresistance properties of an InSb quantum well sub‐micron Hall cross with lateral dimensions of 477 nm and active device dimensions of the order of 340 nm. Ballistic transport anomalies are observed in the low fi
Autor:
A. K. M. Newaz, W.-J. Chang, K. D. Wallace, S. A. Wickline, R. Bashir, A. M. Gilbertson, L. F. Cohen, L. C. Edge, S. A. Solin, Jisoon Ihm, Hyeonsik Cheong
Publikováno v:
AIP Conference Proceedings.
We report here the observation of inverse extraordinary optoconductance (I‐EOC) in a Ti‐GaAs metal‐semiconductor hybrid (MSH) structure where the photoconductance of the device decreases as the light intensity increases. The artificially design
Publikováno v:
AIP Conference Proceedings.
A real schottky interface usually exhibits non‐ideal properties. By analyzing the linear dependence between the ideal factor n and current I at high current bias and the quasi‐exponential dependence between I and V at low current bias, we have de
Publikováno v:
AIP Conference Proceedings.
Metal‐semiconductor hybrid sensors have been shown to enhancing optical signal levels relative to that of the bare semiconductor through a process labeled extraordinary optoconductance. An EOC of 480% at 30K in GaAs has been demonstrated but this d
Autor:
A. Husmann, Stuart A. Solin, Will R. Branford, A. M. Gilbertson, Lesley F. Cohen, S. K. Clowes, Louise Buckle, T. Zhang
Publikováno v:
AIP Conference Proceedings.
Geometric manipulation of the magnetoresistance of InSb remains topical. Here we aim to investigate the magnetoresistance properties of disc arrays contacted by gold bridges. In order for the gold bridges to significantly alter the magnetoresistance
Publikováno v:
AIP Conference Proceedings.
The electrical properties of relaxed InSb films grown on GaAs substrates depend primarily on an inherent magnetoresistance in the layers and not on surface morphology. The magnetoresistance of these films can be described well using a simple model th