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pro vyhledávání: '"Hiroshi Imamura"'
Publikováno v:
AIP Advances, Vol 14, Iss 3, Pp 035115-035115-5 (2024)
Write failure (WF) is a major reliability issue for applications of magnetoresistive random access memory (MRAM), and much effort has been devoted to reducing the write error rate (WER), which is the probability of write failures of a memory cell. Re
Externí odkaz:
https://doaj.org/article/3ec432a1408a4207b12ed5283be017c5
Autor:
Hiroshi Imamura, R. Matsumoto
Publikováno v:
AIP Advances, Vol 9, Iss 12, Pp 125123-125123-4 (2019)
Simulating the magnetization dynamics in a perpendicularly-magnetized free layer with Langevin equation, we investigated methods for reducing write error rate (WER) in voltage-induced switching with long tolerance of voltage-pulse duration (tp). The
Autor:
Hiroshi Imamura, Y. Kitaoka
Publikováno v:
AIP Advances, Vol 7, Iss 4, Pp 045006-045006-6 (2017)
Magnetic anisotropy energy (MAE) of a Ru monolayer on MgO(001) substrate under the application of an electric field is investigated by using first-principles calculations. Owing to the large spin orbit coupling in Ru atoms, both MAE and its rate of c