Zobrazeno 1 - 1
of 1
pro vyhledávání: '"Jingjing Jin"'
Autor:
Jingjing Jin, Shengdong Hu, Yinhui Chen, Kaizhou Tan, Jun Luo, Feng Zhou, Zongze Chen, Ye Huang
Publikováno v:
Advances in Condensed Matter Physics, Vol 2015 (2015)
In order to achieve a high breakdown voltage (BV) for the SOI (Silicon-On-Insulator) power device in high voltage ICs, a novel high voltage n-channel lateral double-diffused MOS (LDMOS) with a lateral variable interface doping profile (LVID) placed a
Externí odkaz:
https://doaj.org/article/c3cd0b5e11504bef93f5f0c35e158ba4