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pro vyhledávání: '"Xiangang Xu"'
Autor:
Songyang Lv, Shouzhi Wang, Lili Li, Shoutian Xie, Jiaoxian Yu, Yueyao Zhong, Guodong Wang, Chang Liang, Xiangang Xu, Lei Zhang
Publikováno v:
Advanced Science, Vol 10, Iss 15, Pp n/a-n/a (2023)
Abstract Gallium nitride (GaN) single crystal, as the representative of wide‐band semiconductors, has great prospects for high‐temperature energy storage, of its splendid power output, robust temperature stability, and superior carrier mobility.
Externí odkaz:
https://doaj.org/article/0071c168737a435485d093ba1f60ece7