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Autor:
Farehanim, Uda Hashim, M. K. Md Arshad, Ramzan Mat Ayub, A. H. Azman, S. Norhafizah, M. Nurfaiz, M.Z. Kamarudin, Mohamad Faris Mohamad Fathil, M. Wesam Al-Mufti, M. N. M. Nuzaihan
Publikováno v:
Advanced Materials Research. 1109:6-10
Silicon dioxide film has been used as the gate dielectric material in MOS device technology for decades. The film is normally grown in a diffusion furnace using a dry thermal oxidation process. As the device is scaled down to nanometer dimensions, th