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pro vyhledávání: '"364.3"'
Autor:
Song, Jae Chul, Kang, D.H., Shim, Byung Young, Ko, Eun A, Kim, Dong Wook, Santhakumar, Kannappan, Lee, Cheul Ro
Publikováno v:
Advanced Materials Research; November 2007, Vol. 29 Issue: 1 p355-358, 4p
Autor:
D.H. Kang, Dong Wook Kim, Cheul Ro Lee, Jae Chul Song, Byung Young Shim, Eun A. Ko, Kannappan Santhakumar
Publikováno v:
Advanced Materials Research. :355-358
GaN epilayers were grown on lens shaped patterned sapphire substrate (PSS) (0001) and unpatterned sapphire substrate (UPSS) (0001) by metal-organic chemical vapor deposition (MOCVD). The quality of the grown GaN epilayers on the PSS and UPSS were com