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Autor:
D.H. Kang, Dong Wook Kim, Cheul Ro Lee, Jae Chul Song, Byung Young Shim, Eun A. Ko, Kannappan Santhakumar
Publikováno v:
Advanced Materials Research. :355-358
GaN epilayers were grown on lens shaped patterned sapphire substrate (PSS) (0001) and unpatterned sapphire substrate (UPSS) (0001) by metal-organic chemical vapor deposition (MOCVD). The quality of the grown GaN epilayers on the PSS and UPSS were com