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Autor:
Hong-Liang Lu, Wei Huang, Zhi-Qiang Xiao, Xiao-Xi Li, Su-Zhen Wu, Jin-Xin Chen, Zhi-Hong Feng, Zhigang Ji
Publikováno v:
2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
The radiation characteristics of vertical GaN-on-GaN Schottky barrier diodes (SBD) by the bias of +0.8 V and -5.0 V have been investigated with four different doses of the total ionizing dose irradiation for the first time. The off-state current decr