Zobrazeno 1 - 3
of 3
pro vyhledávání: '"YOUGUANG ZHANG"'
Autor:
Youguang Zhang, Weisheng Zhao, Zhaohao Wang, Wang Kang, Liang Chang, Yang Liu, Simin Li, Zuwei Li
Publikováno v:
ISCAS
Spin orbit torque (SOT) has been proposed as a potential alternative mechanism to the conventional spin transfer torque (STT) for the magnetization switching. Recently, theoretical and experimental works revealed the novel factors influencing the SOT
Publikováno v:
ISCAS
Although the magnetic tunnel junction (MTJ) is intrinsically immune to radiation, the read/write operations of magnetic random access memory (MRAM) may be vulnerable to radiation-induced current. In this paper, we investigate the radiation hardening
Publikováno v:
ISCAS
As the technology node shrinks, leakage power becomes a bottleneck for processor performance and memory capacity scalings. Spin Torque Transfer Magnetic Random Access Memory (STT-MRAM) has negligible leakage power, fast access speed, high integration