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pro vyhledávání: '"Baoyu Xu"'
Publikováno v:
2010 Symposium on Photonics and Optoelectronics.
Prepared a-SiC thin films with plasma enhanced chemical vapor deposition (PECVD) at low temperature (135 ℃), by using CH4, H2, SiH4 and B2H6. And with Raman spectroscopy, ellipsometry, absorption spectroscopy and other equipment to demonstrate the
Publikováno v:
2010 Symposium on Photonics and Optoelectronics.
The structural characteristics, deposition rate, absorption spectra and optical band gap of the silicon-germanium thin films, which were prepared by RF-PECVD, had been researched under the diffferent Germane's concentration. By test of Raman, all the