Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Doris Schmitt"'
Autor:
G. Knoblinger, M. Sterkel, M. Weis, M. Fulde, Walter Hansch, Th. Nirschl, Gerhard Wachutka, A. Heigl, Doris Schmitt-Landsiedel, M. Wirnshofer, Klaus Von Arnim
Publikováno v:
2008 2nd IEEE International Nanoelectronics Conference.
We present fabrication, optimization and application aspects of complementary Multiple-Gate Tunneling FETs (MuGTFETs). Tunneling FETs are implemented in a MuGFET technology for the first time. N- and p-type tunneling currents are observed within a si
Autor:
György Csaba, Paolo Lugli, Patrick J. Osswald, Markus Becherer, Doris Schmitt-Landsiedel, Wolfgang Porod, R. Emling
Publikováno v:
2008 2nd IEEE International Nanoelectronics Conference.
This work demonstrates a novel extraordinary Hall-effect sensor which is designed to probe the magnetization state of micron-scale Co/Pt dots. The applied split-current geometry is well-suited for the electrical readout of field-coupled computing str