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Autor:
S.O. Park, Yongjik Park, Kinam Kim, Seung-Kyu Oh, D. J. Jung, D.S. Hwang, Yoon-Jong Song, Sung-Yung Lee, S.Y. Lee, In Soo Jung, June-Woo Lee, B.J. Koo, H.-J. Cho
Publikováno v:
1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325).
Recently, ferroelectric random access memory has drawn a great deal of attention due to inherent properties such as nonvolatility, long retention time, high endurance, fast access time, small cell size compared to DRAM cell size in principle, and str