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Autor:
Motoichi Ohtsu
Sizes of electronic and photonic devices are decreasing drastically in order to increase the degree of integration for large-capacity and ultrahigh speed signal transmission and information processing. This miniaturization must be rapidly progresse
Since the 1997 publication of'Silicon Carbide - A Review of Fundamental Questions and Applications to Current Device Technology'edited by Choyke, et al., there has been impressive progress in both the fundamental and developmental aspects of the SiC
Autor:
R.J. Shul, S.J. Pearton
Pattern transfer by dry etching and plasma-enhanced chemical vapor de position are two of the cornerstone techniques for modern integrated cir cuit fabrication. The success of these methods has also sparked interest in their application to other
Autor:
Bernhard Kramer
The 2001 Spring Meeting of the 65th Deutsche Physikalische Gesellschaft was held together with the 65. Physikertagung, in Hamburg, during the pe riod March 26 30 2001. With more than 3500 conference attendees, a record has again been achieved after s