Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Lyu, Xiao"'
Autor:
Yuan, Yifan, Kotiuga, Michele, Park, Tae Joon, Ni, Yuanyuan, Saha, Arnob, Zhou, Hua, Sadowski, Jerzy T., Al-Mahboob, Abdullah, Yu, Haoming, Du, Kai, Zhu, Minning, Deng, Sunbin, Bisht, Ravindra S., Lyu, Xiao, Wu, Chung-Tse Michael, Ye, Peide D., Sengupta, Abhronil, Cheong, Sang-Wook, Xu, Xiaoshan, Rabe, Karin M., Ramanathan, Shriram
Materials with field-tunable polarization are of broad interest to condensed matter sciences and solid-state device technologies. Here, using hydrogen (H) donor doping, we modify the room temperature metallic phase of a perovskite nickelate NdNiO3 in
Externí odkaz:
http://arxiv.org/abs/2311.12200
In this work, we investigate the device-to-device variations in remanent polarization of Hafnium-Zirconium-Oxide based Metal-Ferroelectric-Insulator-Metal (MFIM) stacks. We consider the effects of polycrystallinity in conjunction with multi-domain ef
Externí odkaz:
http://arxiv.org/abs/2303.15625
This is a white paper on the STCF charm physics contributing to the Snowmass 2021 proceedings in the RF01 working group.
Comment: White Paper on STCF charm physics; contribution to Snowmass 2021
Comment: White Paper on STCF charm physics; contribution to Snowmass 2021
Externí odkaz:
http://arxiv.org/abs/2203.03211
Autor:
Li, Hai-Bo, Lyu, Xiao-Rui
Publikováno v:
Natl. Sci. Rev. 8, no. 11, nwab181 (2021)
A comprehensive review of weak decays of charmed hadrons ($D^{0/+}$, $D^+_s$ and $\Lambda^+_c$) based on analyses of the threshold data from $e^+e^-$ annihilation in the BESIII experiment is presented. Current experimental challenges and successes in
Externí odkaz:
http://arxiv.org/abs/2103.00908
Autor:
Si, Mengwei, Hu, Yaoqiao, Lin, Zehao, Sun, Xing, Charnas, Adam, Zheng, Dongqi, Lyu, Xiao, Wang, Haiyan, Cho, Kyeongjae, Ye, Peide D.
In this work, we demonstrate enhancement-mode field-effect transistors by atomic-layer-deposited (ALD) amorphous In2O3 channel with thickness down to 0.7 nm. Thickness is found to be critical on the materials and electron transport of In2O3. Controll
Externí odkaz:
http://arxiv.org/abs/2012.12433
Autor:
Si, Mengwei, Andler, Joseph, Lyu, Xiao, Niu, Chang, Datta, Suman, Agrawal, Rakesh, Ye, Peide D.
Publikováno v:
ACS Nano 2020, 14, 9, 11542-11547
In this work, we demonstrate high performance indium-tin-oxide (ITO) transistors with the channel thickness down to 1 nm and ferroelectric Hf0.5Zr0.5O2 as gate dielectric. On-current of 0.243 A/mm is achieved on sub-micron gate-length ITO transistors
Externí odkaz:
http://arxiv.org/abs/2008.09881
Publikováno v:
ACS Appl. Electron. Mater., vol. 1, no. 5, pp. 745-751, 2019
The ferroelectric polarization switching in ferroelectric hafnium zirconium oxide (Hf0.5Zr0.5O2, HZO) in the HZO/Al2O3 ferroelectric/dielectric stack is investigated systematically by capacitance-voltage and polarization-voltage measurements. The thi
Externí odkaz:
http://arxiv.org/abs/1812.05260
Publikováno v:
PoS (CKM2016) 014
We summarize the current status of the determination of the CKM matrix elements |V_ud| and |V_us|, which is at the precision frontier of CKM phenomenology. We also review recent progress on the study of charm (semi)leptonic decays, and the determinat
Externí odkaz:
http://arxiv.org/abs/1705.05975
We propose to measure the decay asymmetry parameters in the hadronic weak decays of singly charmed baryons, such as $\ldc\to\ld\pi^+,\Sigma^0\pi^+,p \bar K_0$, $\Xi_c^0\to\Xi^-\pi^+$ and $\Omega_c^0\to\Omega^-\pi^+$. The joint angular formulae for th
Externí odkaz:
http://arxiv.org/abs/1612.05918
Autor:
Zhang, Yu-Ning, Liu, Qian, Liu, Hong-Bang, Xie, Yi-Gang, Lyu, Xiao-Rui, Chen, Shi, Huang, Wen-Qian, Hong, Dao-Jin, Zheng, Yang-Heng
A sealed high gas pressure detector working in pure argon is assembled. It consists of a 5 cm $\times$ 5 cm PCB THGEM (THick Gaseous Electron Multipliers). The detector structure and experimental setup are described. The performances under high press
Externí odkaz:
http://arxiv.org/abs/1611.10128