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pro vyhledávání: '"Bain, James"'
Resistive switching devices based on transition metal oxides require formation of a conductive filament in order for the device to be able to switch. Such filaments have been proposed to form by the reduction of the oxide due to application of the el
Externí odkaz:
http://arxiv.org/abs/2004.06571
Autor:
Kim, Yongjune, Sharma, Abhishek A., Mateescu, Robert, Song, Seung-Hwan, Bandic, Zvonimir Z., Bain, James A., Kumar, B. V. K. Vijaya
We propose locally rewritable codes (LWC) for resistive memories inspired by locally repairable codes (LRC) for distributed storage systems. Small values of repair locality of LRC enable fast repair of a single failed node since the lost data in the
Externí odkaz:
http://arxiv.org/abs/1602.01202