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pro vyhledávání: '"Kumar, ·Avinash"'
Autor:
Kumar, Avinash, Singisetti, Uttam
$\beta$-Gallium Oxide (Ga$_{2}$O$_{3}$) is an extensively investigated ultrawide-bandgap semiconductor for potential applications in power electronics and RF switching. The room temperature bulk electron mobility ($\sim$200 cm$^{2}$V$^{-1}$s$^{-1}$)
Externí odkaz:
http://arxiv.org/abs/2206.06405