Zobrazeno 1 - 10
of 35
pro vyhledávání: '"Liu, Ying"'
Autor:
Morozovska, Anna N., Eliseev, Eugene A., Liu, Yongtao, Kelley, Kyle P., Ghosh, Ayana, Liu, Ying, Yao, Jinyuan, Morozovsky, Nicholas V., Kholkin, Andrei L, Vysochanskii, Yulian M., Kalinin, Sergei V.
Using Landau-Ginzburg-Devonshire (LGD) phenomenological approach we analyze the bending-induced re-distribution of electric polarization and field, elastic stresses and strains inside ultrathin layers of van der Waals ferrielectrics. We consider a Cu
Externí odkaz:
http://arxiv.org/abs/2305.15247
Autor:
Wang, Wen-Xiao, Li, Kaihui, Dong, Xiaoshan, Xie, Hao, Qiu, Jinglan, Xu, Chunqiang, Liu, Kai, Song, Juntao, Wei, Yi-Wen, Bai, Ke-Ke, Xu, Xiaofeng, Liu, Ying
Nickel ditelluride (NiTe2), a new discovered type-II Dirac semimetal whose Dirac node lies close to its Fermi level, is expected to exhibit exotic phenomena including Lifshitz transition and superconductivity. As we know, defects are inevitable for t
Externí odkaz:
http://arxiv.org/abs/2201.00294
A two-dimensional (2D) topological semimetal is characterized by the nodal points in its low-energy band structure. While the linear nodal points have been extensively studied, especially in the context of graphene, the realm beyond linear nodal poin
Externí odkaz:
http://arxiv.org/abs/2105.08424
Autor:
Liu, Ying, Tan, Lei, Cibin, Giannantonio, Gianolio, Diego, Han, Shuo, Yu, Kui, Dove, Martin T., Sapelkin, Andrei V.
Magic-size clusters are ultra-small colloidal semiconductor systems that are intensively studied due to their monodisperse nature and sharp UV-vis absorption peak compared with regular quantum dots. However, the small size of such clusters (<2 nm), a
Externí odkaz:
http://arxiv.org/abs/2007.11332
Publikováno v:
Phys. Rev. Lett. 125, 076801 (2020)
A particle beam may undergo an anomalous spatial shift when it is reflected at an interface. The shift forms a vector field defined in the two-dimensional interface momentum space. We show that, although the shift vector at individual momentum is typ
Externí odkaz:
http://arxiv.org/abs/2004.10442
Autor:
Feng, Xiaolong, Liu, Ying, Yu, Zhi-Ming, Ma, Zhongshui, Ang, L. K., Ang, Yee Sin, Yang, Shengyuan A.
Publikováno v:
Phys. Rev. B 101, 235417 (2020)
Novel fermions with a pseudospin-1 structure can be realized as emergent quasiparticles in condensed matter systems. Here, we investigate its unusual properties during the Andreev reflection at a normal-metal/superconductor (NS) interface. We show th
Externí odkaz:
http://arxiv.org/abs/1912.12774
Realisation of Symmetry Enforced Two-Dimensional Dirac Fermions in Nonsymmorphic $\alpha$-Bismuthene
Autor:
Kowalczyk, Pawel J., Brown, Simon A., Maerkl, Tobias, Lu, Qiangsheng, Chiu, Ching-Kai, Liu, Ying, Yang, Shengyuan A., Wang, Xiaoxiong, Zasada, Ilona, Genuzio, Francesca, Menteş, T. Onur, Locatelli, Andrea, Chiang, Tai-Chang, Bian, Guang
Publikováno v:
ACS Nano 2020, 14, 2, 1888
Two-dimensional (2D) Dirac-like electron gases have attracted tremendous research interest ever since the discovery of free-standing graphene. The linear energy dispersion and non-trivial Berry phase play the pivotal role in the remarkable electronic
Externí odkaz:
http://arxiv.org/abs/1906.08456
Publikováno v:
PhysRevB.99.245418 (2019)
The role of electron-phonon scattering in finite-temperature anomalous Hall effect is still poorly understood. In this work, we present a Boltzmann theory for the side-jump contribution from electron-phonon scattering, which is derived from the micro
Externí odkaz:
http://arxiv.org/abs/1906.04977
Autor:
Wang, Shan-Shan, Yu, Zhi-Ming, Liu, Ying, Jiao, Yalong, Guan, Shan, Sheng, Xian-Lei, Yang, Shengyuan A.
Publikováno v:
Phys. Rev. Materials 3, 084201 (2019)
Two-dimensional (2D) materials with nodal-loop band crossing have been attracting great research interest. However, it remains a challenge to find 2D nodal loops that are robust against spin-orbit coupling (SOC) and realized in magnetic states. Here,
Externí odkaz:
http://arxiv.org/abs/1903.04705
We demonstrate a fabrication scheme for clean suspended structures using chemical-vapor-deposition-grown graphene and a dry transfer method on lift-off-resist-coated substrates to facilitate suspended graphene nanoelectronic devices for technology ap
Externí odkaz:
http://arxiv.org/abs/1903.03780