Zobrazeno 1 - 10
of 11
pro vyhledávání: '"311"'
Autor:
Jahn, U, Nötzel, R, Fricke, J, Schönherr, H.-P, Kurth, T, Heitmann, D, Däweritz, L, Grahn, H.T, Ploog, K.H
Publikováno v:
Microelectronics Journal; April-May 1999, Vol. 30 Issue: 4-5 p445-448, 4p
Publikováno v:
Microelectronics Journal; 1997, Vol. 28 Issue: 8 p795-802, 8p
Publikováno v:
Microelectronics Journal; 1997, Vol. 28 Issue: 8 p1025-1030, 6p
Publikováno v:
Microelectronics Journal; 1997, Vol. 28 Issue: 8 p1011-1018, 8p
Publikováno v:
Microelectronics Journal; 1997, Vol. 28 Issue: 8 p993-998, 6p
Autor:
Tejedor, P., Dominguez, P. S.
Publikováno v:
Microelectronics Journal; 1995, Vol. 26 Issue: 8 p853-860, 8p
Effect of As overpressure on Si-doped (111)A, (211)A and (311)A GaAs grown by molecular beam epitaxy
Publikováno v:
Microelectronics Journal; 1995, Vol. 26 Issue: 8 p759-766, 8p
Autor:
Simmons, M. Y., Churchill, A. C., Kim, G. H., Hamilton, A. R., Kurobe, A., Mace, D. R., Ritchie, D. A., Pepper, M.
Publikováno v:
Microelectronics Journal; 1995, Vol. 26 Issue: 8 p897-897, 1p
Publikováno v:
Microelectronics Journal; April-May 1999, Vol. 30 Issue: 4-5 p319-322, 4p
Publikováno v:
Microelectronics Journal; April-May 1999, Vol. 30 Issue: 4-5 p323-328, 6p