Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Wufeng Deng"'
Publikováno v:
IEEE Transactions on Electron Devices. 68:1202-1206
The optimized postdeposition annealing (PDA) of the high- ${k}$ metal gate is investigated for 1/ ${f}$ noise performance improvement in FinFET technology by using spike annealing (SPA) and SPA-combined millisecond flash annealing (MFLA) treatment. I
Autor:
Kent Liu, Jason Zhang, Hongtao Liu, Feng Zhao, Kerry Song, Wufeng Deng, Junzhu Cao, Sky Zhou, Feng Chen, Ethan Bao, Jun Zhao, Erico Zhou, Tony Hu, Larry Chen
Publikováno v:
ECS Transactions. 44:531-536
Novel CuCMP slurry was evaluated under different polishing conditions and its impact on topography, thickness and in line test performance was investigated. Generally, topography, such as dishing and erosion, results from over-polishing after Cu poli
Publikováno v:
2015 China Semiconductor Technology International Conference.
Aluminum (Al) film has been implemented in semiconductor manufacturing such as gap fill in the metal gate trench. Al-induced crystallization and layer exchange processes showed great impact on grain size, and Al grain size was varied by deposition ra