Zobrazeno 1 - 10
of 862
pro vyhledávání: '"Tadahiro Ohmi"'
Publikováno v:
IEICE Transactions on Electronics. :463-467
Publikováno v:
IEICE Transactions on Electronics. :535-540
Publikováno v:
International Journal of Machine Learning and Computing. 5:404-408
Autor:
Kenichi Nakamura, Tadahiro Ohmi, Yasuyuki Shirai, Fuminobu Imaizumi, Tomoyuki Suwa, Shigetoshi Sugawa, Akinobu Teramoto, Kenji Nagao
Publikováno v:
ECS Transactions. 66:11-21
I. INTRODUCSION Gallium nitride (GaN) -based materials are used for HEMTs, MESFETs, and MOSFETs. GaN-based transistors operate under high power, high frequency, and high temperature. These devices have surface or interface related problems, such as d
Autor:
Hisaya Sugita, Tetsuya Goto, Shigetoshi Sugawa, Tadahiro Ohmi, Satoru Yamashita, Tomoyuki Suwa, Hidekazu Ishii, Yasumasa Koda, Akinobu Teramoto, Rihito Kuroda
Publikováno v:
ECS Transactions. 66:305-314
Introduction On-chip capacitors are used for various purposes in electronic devices, for example, AC coupling capacitors, bypass capacitors, sample and hold circuits for analog signals, and so on. For these purposes, a high capacitance density is req
Publikováno v:
ECS Transactions. 66:261-267
BiFeO3 (BFO) thin film has been developed for realizing high-performance ferroelectric memory and/or sensors.[1-3] Furthermore, BFO film has received attention for realizing high open-circuit voltage solar cells.[4] Unlike other conventional ferroele
Publikováno v:
SID Symposium Digest of Technical Papers. 45:5-8
We developed new magnetron sputtering equipment called rotation magnet sputtering (RMS), where multiple moving plasma loops are exited on the planar target surface, obtaining high target utilization. The moving plasma loops also worked efficiently to
Autor:
Tomoyuki Suwa, Tadahiro Ohmi, Tsukasa Motoya, Akinobu Teramoto, Hiroaki Tanaka, Shigetoshi Sugawa
Publikováno v:
ECS Transactions. 61:47-53
I. Introduction In order to reduce source/drain parasitic resistance (RSD) in LSIs, it is essential to reduce contact resistance (Rc) [1, 2]. As the Schottky barrier height (SBH) between silicide and silicon must be low to achieve low contact resisti